Storyboard and Timing

v5: approximately 146.0508 s in the authored timeline. The supplied film used a 146.1 s render interval, giving 4,383 frames at 30 fps. A render ending at the exact authored duration can differ by a frame; see rendering instructions.

The first column is the internal story coordinate, not a playback timestamp. Caption-reading intervals map 0–102 story seconds to 0–146.0508 film seconds. Viewing times are rounded navigation aids from the supplied timeline, not edit points guaranteed to remain fixed after changing text.

Viewing outline

Story coordinate	Approximate viewing time	Explanatory beat	What carries forward
0–17 s	0:00–0:26	Draw the cross-section; apply gate bias; establish the channel; distinguish electron motion and conventional current	Channel and gate/channel charge relationship
17–28.4 s	0:26–0:44	Introduce capacitance and the same-charge/lower-voltage relation; let the cross-section gain depth	The device and dielectric region
28.4–44 s	0:44–1:08	Introduce electrolyte ions, rearrangement at two interfaces and the potential profile	The lower interface
44–60.4 s	1:08–1:28	Enter the interface; reveal ionic/electronic charge layers and effective separation	The two charge layers
60.4–78 s	1:28–1:49	Pull out; compare two devices at the same target channel-charge change	The voltage contrast
78–89.8 s	1:49–2:06	Illustrate solid-dielectric field stress and a schematic breakdown path	The qualified risk comparison
89.8–96.4 s	2:06–2:20	State limits: local fields, material strength, electrochemistry and lateral failure	The full-device context
96.4–102 s	2:20–2:26	Return to the flat cross-section and summarize the causal chain	The opening view

Story-coordinate anchors

Story position	Visual action	Physical meaning
0–4	Reveal substrate, source, drain, dielectric and gate	Establish components before they move
4–10	Gate charge and field appear; holes recede; electrons gather	Gate control changes carrier distribution
Around 10	Channel continuity receives a visual/sound accent	The illustrated threshold crossing
11.5–17	Electron drift and a separate current arrow	Distinguish vertical gate control and lateral transport
17–22	Charge layers and capacitor labels emerge from the structure	Link the device to the capacitance picture
22–28	Extrusion, rotation and widening perspective	Preserve the object as the view becomes spatial
28–34	Electrolyte replaces the dielectric illustration	Introduce ions without implying a literal fabrication step
34–44	Anions gather near the gate, cations near the semiconductor; electrons accumulate across the interface	Interfacial redistribution and near-neutral bulk
44–50	Camera dives; macro and magnified representations overlap briefly	Change scale without losing the interface
50–60	Charge layers, effective distance and field cues remain visible	Inspect why interfacial capacitance can be large
60–66	Pull out and introduce the conventional reference	Prepare a common comparison
66–78	Both channels follow the same charge parameter; voltage columns differ	Compare common target charge, not common voltage
78–88	Increase solid-dielectric stress; show defects and a path	Illustrate a possible gate-related failure
88–96.4	Limitations remain on screen as the camera relaxes	Prevent an absolute reliability claim
96.4–102	Flatten the device and present the causal chain	Close in the original visual language

What changed in v5

A small contact offset complements the earlier drawing-order fix.
Channel electrons span the full path; the plate has reduced glare.
Cations are amber, anions green and positive gate charges violet-gray, with corresponding legend entries.
A front-third electrolyte cutaway and interface grid separate overlapping regions; the macro view uses fewer ions.
The 2D-to-3D transition adds anticipation, acceleration, moving light and coordinated sound.
Breakdown gains a branching channel, cracks, light pulse and camera emphasis. These are designed cues, not numerical results.
Shorter text and faster middle/later intervals reduce the roughly 176 s cut to approximately 146 s; the pulse is 104 BPM.

See production notes for review context and scientific scope for the limits of the imagery.